Enhanced 650-V Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) Amplify Power Intensity and Efficiency in Industrial Machinery
Toshiba Electronics has announced the volume shipment of its third-generation, 650-volt silicon-carbide (SiC) MOSFETs. These new devices, available in the compact DFN8x8 surface-mount package, are designed for use in switched-mode power supplies (SMPS), electric-vehicle (EV) charging stations, uninterruptible power supplies (UPS), and photovoltaic inverters.
The new SiC MOSFETs stand out by combining a dramatically smaller DFN8x8 package with superior electrical performance. This compact package reduces the volume by over 90% compared to traditional lead-inserted packages such as TO-247 and TO-247-4L(X). This significant size reduction enables much higher power density in industrial equipment, allowing for more compact and lightweight designs.
One of the key advantages of the DFN8x8 package is the minimization of parasitic inductance and impedance. The surface-mount design and the multi-pin Kelvin source connection contribute to this reduction. The Kelvin connection helps reduce the influence of inductance in the source wire, which is critical for high-speed switching performance. As a result, the new SiC MOSFETs achieve up to 55% lower turn-on switching losses and approximately 25% lower turn-off losses compared to previous Toshiba SiC MOSFETs.
Fabricated in Toshiba’s advanced third-generation process, these devices exhibit a consistently low drain-source on-resistance (R_DS(on)) with a favorable temperature coefficient and reduced gate-drain charge (Q_gd). This results in an improved (R_DS(on) × Q_gd) figure of merit, enhancing both efficiency and power density in high-voltage power systems.
In addition, Toshiba has optimized the trench MOSFET structure to reduce drift resistance and improve on-resistance behavior at high temperatures. This technology boost supports reliability in demanding environments such as electric vehicles and renewable energy applications, where devices can face elevated temperatures.
The new SiC MOSFETs are particularly suited for industrial equipment, renewable energy systems, EV charging stations, and UPS systems. The compact packaging and loss reduction enable smaller, more efficient, and higher power density designs in these applications.
In conclusion, Toshiba's third-generation SiC MOSFETs (TW031V65C, TW054V65C, TW092V65C, TW123V65C) offer several distinct advantages and applications in high-voltage environments, providing more compact, efficient, and cost-effective high-voltage power systems.
The third-generation SiC MOSFETs from Toshiba Electronics, such as TW031V65C, TW054V65C, TW092V65C, and TW123V65C, not only benefit from their reduced size due to the DFN8x8 package, but also show improved electrical performance, consisting of lower switching losses and enhanced efficiency. These advancements in power electronics are expected to facilitate data-and-cloud-computing by enabling more compact and lightweight technology in various industries, including renewable energy systems, electric vehicles, and industrial equipment.
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