High-Power Density and High Efficiency Space and Defense Applications Advance with Rad hard GaN Technology
In the ever-evolving world of aerospace and defense technology, the latest trends revolve around radiation-hardened Gallium Nitride (GaN) technology. This innovation is paving the way for the development of high-voltage, high-power GaN devices and integrated systems optimized for the harsh radiation environments typical of space missions.
At the forefront of this development is the creation of radiation-hardened GaN power devices. Companies such as EPC Space have launched products like the EPC7030MSH, a 300V radiation-hardened GaN FET, designed for next-generation space systems. Similarly, EPC's EPC7C021 three-phase motor demonstration board incorporates the radiation-hardened EPC7011L7C eGaN® IC, ideal for motor drives in radiation-critical environments.
The advancements don't stop at power devices. Material and design approaches are also being refined to withstand the total ionizing dose (TID) and single-event effects (SEE) common in space. Radiation-hardened GaN devices benefit from rad-hard by design (RHBD) techniques, including error detection/correction algorithms, guard rings, and triple modular redundancy at the circuit and system level.
Extensive testing and qualification are crucial to validate the reliability of these GaN devices. Specialised facilities such as NASA’s NSRL conduct rigorous single event upset (SEU), latch-up immunity, and total dose tolerance testing, demonstrating improved robustness compared to conventional silicon counterparts.
As these radiation-hardened GaN devices are integrated into high-reliability systems, they are designed to meet stringent space standards such as ESA ESCC and MIL-PRF requirements. Companies like Infineon Technologies provide rad-hard power MOSFETs and integrated power management components, often integrating GaN or SOI technologies to combine radiation tolerance with high power density and efficiency.
The broader context of this technology lies in its application to military and space electronics. GaN modules are increasingly critical for compact, efficient RF and power management in rad-hard, high-reliability platforms such as satellite communications, radar, and autonomous space vehicles.
On September 17, 2025, at 2:00 PM ET, 1:00 PM CT, 11:00 AM PT, and 7:00 PM GMT, a webinar sponsored by Infineon Technologies will delve into these advancements and their implications. Sean DArcy, Sr. Marketing Director of Aerospace and Defense at Infineon Technologies, and Joe Dussi, Digital Marketing Manager of Aerospace and Defense at Infineon Technologies, will be speakers at the event. The discussion will cover the advantages and opportunities of GaN in rad hard applications, the impact of radiation effects on GaN devices, and the growing need for high-power density and efficiency in satellite communications, space exploration, and missile systems.
The webinar is accessible through a login for those who have already registered. It is intended for applications that require high reliability and will cover the latest industry trends surrounding rad hard GaN.
- The latest industry trends in space exploration and satellite communications involve the integration of radiation-hardened Gallium Nitride (GaN) technology, as seen in the development of high-voltage, high-power GaN devices like the EPC7030MSH by EPC Space.
- Science and technology are convergence points in the aerospace and defense sector, with radiation-hardened GaN devices playing a significant role in space missions, thanks to advancements in material and design approaches, as well as the use of rad-hard by design (RHBD) techniques.
